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Interface Shape Control Using Localized Heating during Bridgman GrowthNumerical calculations were performed to assess the effect of localized radial heating on the melt-crystal interface shape during vertical Bridgman growth. System parameters examined include the ampoule, melt and crystal thermal conductivities, the magnitude and width of localized heating, and the latent heat of crystallization. Concave interface shapes, typical of semiconductor systems, could be flattened or made convex with localized heating. Although localized heating caused shallower thermal gradients ahead of the interface, the magnitude of the localized heating required for convexity was less than that which resulted in a thermal inversion ahead of the interface. A convex interface shape was most readily achieved with ampoules of lower thermal conductivity. Increasing melt convection tended to flatten the interface, but the amount of radial heating required to achieve a convex interface was essentially independent of the convection intensity.
Document ID
20090018054
Acquisition Source
Marshall Space Flight Center
Document Type
Preprint (Draft being sent to journal)
External Source(s)
doi:10.1016/j.jcrysgro.2009.02.019
Authors
Volz, M. P. (NASA Marshall Space Flight Center Huntsville, AL, United States)
Mazuruk, K. (Alabama Univ. Huntsville, AL, United States)
Aggarwal, M. D. (Alabama Agricultural and Mechanical Univ. Huntsville, AL, United States)
Croll, A. (Freiburg Univ. Germany)
Date Acquired
August 24, 2013
Publication Date
January 1, 2008
Publication Information
Publication: Journal of Crystal Growth
Volume: 311
Issue: 8
Subject Category
Inorganic, Organic And Physical Chemistry
Report/Patent Number
M09-0249
Distribution Limits
Public
Copyright
Public Use Permitted.

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