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Total Dose Effects on Single Event Transients in Digital CMOS and Linear Bipolar CircuitsThis presentation discusses the effects of ionizing radiation on single event transients (SETs) in circuits. The exposure of integrated circuits to ionizing radiation changes electrical parameters. The total ionizing dose effect is observed in both complementary metal-oxide-semiconductor (CMOS) and bipolar circuits. In bipolar circuits, transistors exhibit grain degradation, while in CMOS circuits, transistors exhibit threshold voltage shifts. Changes in electrical parameters can cause changes in single event upset(SEU)/SET rates. Depending on the effect, the rates may increase or decrease. Therefore, measures taken for SEU/SET mitigation might work at the beginning of a mission but not at the end following TID exposure. The effect of TID on SET rates should be considered if SETs cannot be tolerated.
Document ID
20090020463
Acquisition Source
Goddard Space Flight Center
Document Type
Presentation
Authors
Buchner, S. (MEI Technologies, Inc. Seabrook, MD, United States)
McMorrow, D.
Sibley, M.
Eaton, P.
Mavis, D.
Dusseau, L. (Montpellier Univ. France)
Roche, N. J-H. (Montpellier Univ. France)
Bernard, M. (Montpellier Univ. France)
Date Acquired
August 24, 2013
Publication Date
April 20, 2009
Subject Category
Electronics And Electrical Engineering
Meeting Information
Meeting: Single Event Effects Symposium
Location: La Jolla, CA
Country: United States
Start Date: April 20, 2009
End Date: April 22, 2009
Sponsors: NASA Goddard Space Flight Center
Distribution Limits
Public
Copyright
Public Use Permitted.

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