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High-Sensitivity GaN Microchemical SensorsSystematic studies have been performed on the sensitivity of GaN HEMT (high electron mobility transistor) sensors using various gate electrode designs and operational parameters. The results here show that a higher sensitivity can be achieved with a larger W/L ratio (W = gate width, L = gate length) at a given D (D = source-drain distance), and multi-finger gate electrodes offer a higher sensitivity than a one-finger gate electrode. In terms of operating conditions, sensor sensitivity is strongly dependent on transconductance of the sensor. The highest sensitivity can be achieved at the gate voltage where the slope of the transconductance curve is the largest. This work provides critical information about how the gate electrode of a GaN HEMT, which has been identified as the most sensitive among GaN microsensors, needs to be designed, and what operation parameters should be used for high sensitivity detection.
Document ID
20090035903
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
External Source(s)
http://www.techbriefs.com/component/content/article/5788
Authors
Son, Kyung-ah (California Inst. of Tech. Pasadena, CA, United States)
Yang, Baohua (California Inst. of Tech. Pasadena, CA, United States)
Liao, Anna (California Inst. of Tech. Pasadena, CA, United States)
Moon, Jeongsun (HRL Labs., LLC Malibu, CA, United States)
Prokopuk, Nicholas (Naval Air Warfare Center United States)
Date Acquired
August 24, 2013
Publication Date
October 1, 2009
Publication Information
Publication: NASA Tech Briefs, October 2009
Subject Category
Instrumentation And Photography
Report/Patent Number
NPO-45973
Distribution Limits
Public
Copyright
Public Use Permitted.

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IDRelationTitle20090035873Collected WorksNASA Tech Briefs, October 2009
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