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Fabrication of Single, Vertically Aligned Carbon Nanotubes in 3D Nanoscale ArchitecturesPlasma-enhanced chemical vapor deposition (PECVD) and high-throughput manufacturing techniques for integrating single, aligned carbon nanotubes (CNTs) into novel 3D nanoscale architectures have been developed. First, the PECVD growth technique ensures excellent alignment of the tubes, since the tubes align in the direction of the electric field in the plasma as they are growing. Second, the tubes generated with this technique are all metallic, so their chirality is predetermined, which is important for electronic applications. Third, a wafer-scale manufacturing process was developed that is high-throughput and low-cost, and yet enables the integration of just single, aligned tubes with nanoscale 3D architectures with unprecedented placement accuracy and does not rely on e-beam lithography. Such techniques should lend themselves to the integration of PECVD grown tubes for applications ranging from interconnects, nanoelectromechanical systems (NEMS), sensors, bioprobes, or other 3D electronic devices. Chemically amplified polyhydroxystyrene-resin-based deep UV resists were used in conjunction with excimer laser-based (lambda = 248 nm) step-and-repeat lithography to form Ni catalyst dots = 300 nm in diameter that nucleated single, vertically aligned tubes with high yield using dc PECVD growth. This is the first time such chemically amplified resists have been used, resulting in the nucleation of single, vertically aligned tubes. In addition, novel 3D nanoscale architectures have been created using topdown techniques that integrate single, vertically aligned tubes. These were enabled by implementing techniques that use deep-UV chemically amplified resists for small-feature-size resolution; optical lithography units that allow unprecedented control over layer-to-layer registration; and ICP (inductively coupled plasma) etching techniques that result in near-vertical, high-aspect-ratio, 3D nanoscale architectures, in conjunction with the use of materials that are structurally and chemically compatible with the high-temperature synthesis of the PECVD-grown tubes. The techniques offer a wafer-scale process solution for integrating single PECVD-grown nanotubes into novel architectures that should accelerate their integration in 3D electronics in general. NASA can directly benefit from this technology for its extreme-environment planetary missions. Current Si transistors are inherently more susceptible to high radiation, and do not tolerate extremes in temperature. These novel 3D nanoscale architectures can form the basis for NEMS switches that are inherently less susceptible to radiation or to thermal extremes.
Document ID
20100036555
Acquisition Source
Jet Propulsion Laboratory
Document Type
Other - NASA Tech Brief
External Source(s)
http://www.techbriefs.com/component/content/article/8626
Authors
Kaul, Anupama B. (California Inst. of Tech. Pasadena, CA, United States)
Megerian, Krikor G. (California Inst. of Tech. Pasadena, CA, United States)
Von Allmen, Paul A. (California Inst. of Tech. Pasadena, CA, United States)
Baron, Richard L. (California Inst. of Tech. Pasadena, CA, United States)
Date Acquired
August 25, 2013
Publication Date
October 1, 2010
Publication Information
Publication: NASA Tech Briefs, October 2010
Subject Category
Man/System Technology And Life Support
Report/Patent Number
NPO-46552
Distribution Limits
Public
Copyright
Public Use Permitted.

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IDRelationTitle20100036532Collected WorksNASA Tech Briefs, October 2010
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