NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Enhanced Low Dose Rate Sensitivity at Ultra-Low Dose RatesWe have presented results of ultra-low dose rate irradiations (< or = 10 mrad(Si)/s) for a variety of radiation hardened and commercial linear bipolar devices. We observed low dose rate enhancement factors exceeding 1.5 in several parts. The worst case of dose rate enhancement resulted in functional failures, which occurred after 10 and 60 krad(Si), for devices irradiated at 0.5 and 10 mrad(Si)/s, respectively. Devices fabricated with radiation hardened processes and designs also displayed dose rate enhancement at below 10 mrad(Si)/s. Furthermore, the data indicated that these devices have not reached the damage saturation point. Therefore the degradation will likely continue to increase with increasing total dose, and the low dose rate enhancement will further magnify. The cases presented here, in addition to previous examples, illustrate the significance and pervasiveness of low dose rate enhancement at dose rates lower than 10 mrad(Si). These results present further challenges for radiation hardness assurance of bipolar linear circuits, and raise the question of whether the current standard test dose rate is conservative enough to bound degradations due to ELDRS.
Document ID
20110008255
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Chen, Dakai (MEI Technologies, Inc. Seabrook, MD, United States)
Pease, Ronald (RLP Research, Inc. Los Lunas, NM, United States)
Forney, James (MEI Technologies, Inc. Seabrook, MD, United States)
Carts, Martin (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Phan, Anthony (MEI Technologies, Inc. Seabrook, MD, United States)
Cox, Stephen (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Kruckmeyer, Kriby (National Semiconductor Corp. Santa Clara, CA, United States)
Burns, Sam (Linear Technology Corp. Milpitas, CA, United States)
Albarian, Rafi (Linear Technology Corp. Milpitas, CA, United States)
Holcombe, Bruce (Texas Instruments, Inc. Sherman, TX, United States)
Little, Bradley (Texas Instruments, Inc. Sherman, TX, United States)
Salzman, James (Texas Instruments, Inc. Sherman, TX, United States)
Chaumont, Geraldine (ST Microelectronics France)
Duperray, Herve (ST Microelectronics France)
Ouellet, Al (ST Microelectronics France)
Buchner, Stephen (Naval Research Lab. Washington, DC, United States)
LaBel, Kenneth (NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
August 25, 2013
Publication Date
January 1, 2011
Subject Category
Space Radiation
Meeting Information
Meeting: IEEE Nuclear and Space Radiation Effects Conference
Location: Las Vegas, NV
Country: United States
Start Date: July 25, 2011
End Date: July 29, 2011
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available