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Forward voltage short-pulse technique for measuring high power laser array junction temperatureThe present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.
Document ID
20120002955
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Meadows, Byron L.
Amzajerdian, Frazin
Barnes, Bruce W.
Baker, Nathaniel R.
Date Acquired
August 25, 2013
Publication Date
February 7, 2012
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-8,112,243
Patent Application
US-Patent-Appl-SN-12/118,172

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