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Method to Improve Indium Bump Bonding via Indium Oxide Removal Using a Multi-Step Plasma ProcessA process for removing indium oxide from indium bumps in a flip-chip structure to reduce contact resistance, by a multi-step plasma treatment. A first plasma treatment of the indium bumps with an argon, methane and hydrogen plasma reduces indium oxide, and a second plasma treatment with an argon and hydrogen plasma removes residual organics. The multi-step plasma process for removing indium oxide from the indium bumps is more effective in reducing the oxide, and yet does not require the use of halogens, does not change the bump morphology, does not attack the bond pad material or under-bump metallization layers, and creates no new mechanisms for open circuits.
Document ID
20120007604
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Greer, H. Frank
Jones, Todd J.
Vasquez, Richard P.
Hoenk, Michael E.
Dickie, Matthew R.
Nikzad, Shouleh
Date Acquired
August 25, 2013
Publication Date
April 24, 2012
Subject Category
Physics (General)
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
NASA-Case-NPO-45911-1|US-Patent-8,163,094
Patent Application
US-Patent-Appl-SN-12/508,006
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