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Oxygen and carbon dioxide sensingA high electron mobility transistor (HEMT) capable of performing as a CO.sub.2 or O.sub.2 sensor is disclosed, hi one implementation, a polymer solar cell can be connected to the HEMT for use in an infrared detection system. In a second implementation, a selective recognition layer can be provided on a gate region of the HEMT. For carbon dioxide sensing, the selective recognition layer can be, in one example, PEI/starch. For oxygen sensing, the selective recognition layer can be, in one example, indium zinc oxide (IZO). In one application, the HEMTs can be used for the detection of carbon dioxide and oxygen in exhaled breath or blood.
Document ID
20120012432
Acquisition Source
Glenn Research Center
Document Type
Other - Patent
Authors
Ren, Fan
Pearton, Stephen John
Date Acquired
August 26, 2013
Publication Date
July 17, 2012
Subject Category
Chemistry And Materials (General)
Funding Number(s)
CONTRACT_GRANT: NAG3-2930
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-8,222,041
Patent Application
US-Patent-Appl-SN-12/990,377

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