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Characterization of 4H <000-1> Silicon Carbide Films Grown by Solvent-Laser Heated Floating ZoneCommercially available bulk silicon carbide (SiC) has a high number (>2000/sq cm) of screw dislocations (SD) that have been linked to degradation of high-field power device electrical performance properties. Researchers at the NASA Glenn Research Center have proposed a method to mass-produce significantly higher quality bulk SiC. In order for this bulk growth method to become reality, growth of long single crystal SiC fibers must first be achieved. Therefore, a new growth method, Solvent-Laser Heated Floating Zone (Solvent-LHFZ), has been implemented. While some of the initial Solvent-LHFZ results have recently been reported, this paper focuses on further characterization of grown crystals and their growth fronts. To this end, secondary ion mass spectroscopy (SIMS) depth profiles, cross section analysis by focused ion beam (FIB) milling and mechanical polishing, and orientation and structural characterization by x-ray transmission Laue diffraction patterns and x-ray topography were used. Results paint a picture of a chaotic growth front, with Fe incorporation dependant on C concentration.
Document ID
20120014345
Acquisition Source
Glenn Research Center
Document Type
Technical Memorandum (TM)
Authors
Woodworth, Andrew, A
(NASA Glenn Research Center Cleveland, OH, United States)
Sayir, Ali
(NASA Glenn Research Center Cleveland, OH, United States)
Neudeck, Philip, G
(NASA Glenn Research Center Cleveland, OH, United States)
Raghothamachar, Balaji
(Stony Brook Univ. Stony Brook, NY, United States)
Dudley, Michael
(Stony Brook Univ. Stony Brook, NY, United States)
Date Acquired
August 26, 2013
Publication Date
September 1, 2012
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
E-18413
NASA/TM-2012-217708
Meeting Information
Meeting: 2012 Materials Research Society Spring Meeting and Exhibit
Location: San Francisco, CA
Country: United States
Start Date: April 9, 2012
End Date: April 13, 2012
Sponsors: Materials Research Society
Funding Number(s)
CONTRACT_GRANT: DE-EE0001093/001
CONTRACT_GRANT: DE-AC02-98CH10886
WBS: WBS 031102.02.03.0781.12
CONTRACT_GRANT: NASA GRC SAA3-1048
Distribution Limits
Public
Copyright
Public Use Permitted.
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