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Low-Noise Large-Area Photoreceivers with Low Capacitance PhotodiodesA quad photoreceiver includes a low capacitance quad InGaAs p-i-n photodiode structure formed on an InP (100) substrate. The photodiode includes a substrate providing a buffer layer having a metal contact on its bottom portion serving as a common cathode for receiving a bias voltage, and successive layers deposited on its top portion, the first layer being drift layer, the second being an absorption layer, the third being a cap layer divided into four quarter pie shaped sections spaced apart, with metal contacts being deposited on outermost top portions of each section to provide output terminals, the top portions being active regions for detecting light. Four transimpedance amplifiers have input terminals electrically connected to individual output terminals of each p-i-n photodiode.
Document ID
20150003162
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Joshi, Abhay M.
Datta, Shubhashish
Date Acquired
March 18, 2015
Publication Date
December 3, 2013
Subject Category
Electronics And Electrical Engineering
Funding Number(s)
CONTRACT_GRANT: NNX09CD48P
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-8,598,673
Patent Application
US-Patent-Appl-SN-12/806,868
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