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Iridium Interfacial Stack (IRIS)An iridium interfacial stack ("IrIS") and a method for producing the same are provided. The IrIS may include ordered layers of TaSi.sub.2, platinum, iridium, and platinum, and may be placed on top of a titanium layer and a silicon carbide layer. The IrIS may prevent, reduce, or mitigate against diffusion of elements such as oxygen, platinum, and gold through at least some of its layers.
Document ID
20150007191
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Spry, David James
Date Acquired
May 1, 2015
Publication Date
April 21, 2015
Subject Category
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,013,002
Patent Application
US-Patent-Appl-SN-13/534,745

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