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Heavily Doped PBSE with High Thermoelectric PerformanceThe present invention discloses heavily doped PbSe with high thermoelectric performance. Thermoelectric property measurements disclosed herein indicated that PbSe is high zT material for mid-to-high temperature thermoelectric applications. At 850 K a peak zT (is) greater than 1.3 was observed when n(sub H) approximately 1.0 X 10(exp 20) cm(exp -3). The present invention also discloses that a number of strategies used to improve zT of PbTe, such as alloying with other elements, nanostructuring and band modification may also be used to further improve zT in PbSe.
Document ID
20150018789
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Snyder, G. Jeffrey
Wang, Heng
Pei, Yanzhong
Date Acquired
October 5, 2015
Publication Date
September 29, 2015
Subject Category
Energy Production And Conversion
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,147,822
Patent Application
US-Patent-Appl-SN-13/282,383

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