High Input Voltage, Silicon Carbide Power Processing Unit Performance DemonstrationA silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.
Document ID
20150023092
Acquisition Source
Glenn Research Center
Document Type
Conference Paper
Authors
Bozak, Karin E. (NASA Glenn Research Center Cleveland, OH United States)
Pinero, Luis R. (NASA Glenn Research Center Cleveland, OH United States)
Scheidegger, Robert J. (NASA Glenn Research Center Cleveland, OH United States)
Aulisio, Michael V. (NASA Glenn Research Center Cleveland, OH United States)
Gonzalez, Marcelo C. (NASA Glenn Research Center Cleveland, OH United States)
Birchenough, Arthur G. (Vantage Partners, LLC Brook Park, OH, United States)
Date Acquired
December 15, 2015
Publication Date
July 27, 2015
Subject Category
Electronics And Electrical EngineeringSpacecraft Propulsion And Power
Report/Patent Number
GRC-E-DAA-TN24657
Meeting Information
Meeting: AIAA Propulsion and Energy 2015
Location: Orlando, FL
Country: United States
Start Date: July 27, 2015
End Date: July 29, 2015
Sponsors: American Inst. of Aeronautics and Astronautics