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Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid StructureOne aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
Document ID
20160011999
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Park, Yeonjoon
Choi, Sang Hyouk
Date Acquired
October 4, 2016
Publication Date
September 20, 2016
Subject Category
Solid-State Physics
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,449,818
Patent Application
US-Patent-Appl-SN-14/204,535

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