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Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz ComponentsA multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.
Document ID
20160013189
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Jung-Kubiak, Cecile
Reck, Theodore
Chattopadhyay, Goutam
Perez, Jose Vicente Siles
Lin, Robert H.
Mehdi, Imran
Lee, Choonsup
Cooper, Ken B.
Peralta, Alejandro
Date Acquired
November 1, 2016
Publication Date
October 4, 2016
Subject Category
Solid-State Physics
Electronics And Electrical Engineering
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,461,352
Patent Application
US-Patent-Appl-SN-14/253,541
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