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Unipolar Barrier Dual-Band Infrared DetectorsDual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.
Document ID
20170010473
Acquisition Source
Headquarters
Document Type
Other - Patent
Authors
Ting, David Z.
Soibel, Alexander
Khoshakhlagh, Arezou
Gunapala, Sarath
Date Acquired
November 1, 2017
Publication Date
October 24, 2017
Subject Category
Electronics And Electrical Engineering
Instrumentation And Photography
Funding Number(s)
CONTRACT_GRANT: NNN12AA01C
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
Patent
US-Patent-9,799,785
Patent Application
US-Patent-Appl-SN-14/998,990

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