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The Effects of ELDRS at Ultra-Low Dose RatesWe present results of ultra-low dose-rate irradiations on a variety of commercial and radiation hardened bipolar circuits. We observed enhanced degradations at dose rates lower than 10 mrad(Si)/s in some devices.
Document ID
20180001185
Acquisition Source
Goddard Space Flight Center
Document Type
Conference Paper
Authors
Chen, Dakai
(MEI Technologies, Inc. Seabrook, MD, United States)
Forney, James
(MEI Technologies, Inc. Seabrook, MD, United States)
Carts, Martin
(MEI Technologies, Inc. Seabrook, MD, United States)
Phan, Anthony
(MEI Technologies, Inc. Seabrook, MD, United States)
Cox, Stephen
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Kruckmeyer, Kirby
(National Semiconductor Corp. Santa Clara, CA, United States)
Burns, Sam
(Linear Technology Corp. Milpitas, CA, United States)
Albarian, Rafi
(Linear Technology Corp. Milpitas, CA, United States)
Holcombe, Bruce
(Texas Instruments, Inc. Sherman, TX, United States)
Little, Bradley
(Texas Instruments, Inc. Sherman, TX, United States)
Salzman, James
(Texas Instruments, Inc. Sherman, TX, United States)
LaBel, Kenneth
(NASA Goddard Space Flight Center Greenbelt, MD, United States)
Date Acquired
February 13, 2018
Publication Date
July 19, 2010
Subject Category
Electronics And Electrical Engineering
Space Radiation
Report/Patent Number
LEGNEW-OLDGSFC-GSFC-LN-1148
Meeting Information
Meeting: Institute of Electrical and Electronics Engineers (IEEE) Nuclear and Space Radiation Effects Conference (NSREC)
Location: Denver, CO
Country: United States
Start Date: July 19, 2010
End Date: July 23, 2010
Sponsors: Institute of Electrical and Electronics Engineers
Distribution Limits
Public
Copyright
Public Use Permitted.
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