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Figures-of-Merit Of Intrinsic, Standard-Doped And Graded-Channel SOI And SOS MOSFETs For Analog Baseband And RF Applications

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Levacq, David [UCL] Dehan, Morin [UCL] Flandre, Denis [UCL] Raskin, Jean-Pierre [UCL]

Figures-of-merit of non-standard channel engineered devices are presented. We put emphasis on effective analog baseband and RF performance from a circuit designer point of view. Measurements on 0.5 μm Fully-Depleted SOI and SOS processes are discussed. We demonstrate very interesting potential of low-doped and graded-channel devices to lower power consumption and increase gain and frequency performance.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2003
Language Anglais
Conference "ECS 11th International Symposium on SOI Technology and Devices", Paris (France) (du 27/04/2003 au 02/05/2003)
Peer reviewed yes
Host document "Proceedings of the ECS 11th International Symposium on SOI Technology and Devices"- 295-300 (ISBN : 1-56677-375-X)
Collection ECS (ISSN : 0161-6374)
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords Doped materials ; Gain ; Power consumption ; Performance evaluation ; MOSFET ; Silicon on insulator technology ; Figure of merit
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Bibliographic reference Levacq, David ; Dehan, Morin ; Flandre, Denis ; Raskin, Jean-Pierre. Figures-of-Merit Of Intrinsic, Standard-Doped And Graded-Channel SOI And SOS MOSFETs For Analog Baseband And RF Applications.ECS 11th International Symposium on SOI Technology and Devices (Paris (France), du 27/04/2003 au 02/05/2003). In: Proceedings of the ECS 11th International Symposium on SOI Technology and Devices, 2003, p.295-300
Permanent URL http://hdl.handle.net/2078.1/113889