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Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires

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Afzalian, Aryan [UCL] Flandre, Denis [UCL]

The impact of discrete random dopant fluctuations on 10-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green's function quantum simulations. Using DS, nanoscale SB-FETs could outperform standard doped source and drain FETs in terms of Ion/Ioff. By reintroducing dopants in SB, however, variability problems are unavoidable and will be strong, at least for thin-width SB-FETs, because of the dopant influence on the SB profile on which the tunneling current is quite sensitive.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2012
Language Anglais
Journal information "IEEE Electron Device Letters" - Vol. 33, no.9, p. 1228-1230 (21/08/2012)
Peer reviewed yes
Publisher I E E E
issn 0741-3106
e-issn 1558-0563
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords dopant segregation (DS) ; nonequilibrium Green ; quantum simulations ; random dopant fluctuation (RDF) ; Schottky barrier (SB)
Links
Bibliographic reference Afzalian, Aryan ; Flandre, Denis. Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires. In: IEEE Electron Device Letters, Vol. 33, no.9, p. 1228-1230 (21/08/2012)
Permanent URL http://hdl.handle.net/2078.1/114318