Afzalian, Aryan
[UCL]
Flandre, Denis
[UCL]
The impact of discrete random dopant fluctuations on 10-nm-long high-performance Schottky-barrier (SB) dopant-segregated (DS) nanowire MOSFETs is investigated through nonequilibrium Green's function quantum simulations. Using DS, nanoscale SB-FETs could outperform standard doped source and drain FETs in terms of Ion/Ioff. By reintroducing dopants in SB, however, variability problems are unavoidable and will be strong, at least for thin-width SB-FETs, because of the dopant influence on the SB profile on which the tunneling current is quite sensitive.
Bibliographic reference |
Afzalian, Aryan ; Flandre, Denis. Discrete Random Dopant Fluctuation Impact on Nanoscale Dopant-Segregated Schottky-Barrier Nanowires. In: IEEE Electron Device Letters, Vol. 33, no.9, p. 1228-1230 (21/08/2012) |
Permanent URL |
http://hdl.handle.net/2078.1/114318 |