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Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors

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Colinge, Jean-Pierre [University College Cork Lee Maltings] Afzalian, Aryan [UCL] Lee, Chi-Woo [University College Cork Lee Maltings] Yan, Ran [University College Cork Lee Maltings] Dehdashti-Akhavan, Nima [University College Cork Lee Maltings]

The minimum energy of the first conduction subband varies with gate voltage in trigate silicon-on-insulator metal-oxide-silicon field-effect transistors MOSFETs in subthreshold operation. In an inversion-mode trigate device, the energy level of the lowest subband increases with electron concentration, while it decreases under the same conditions in some accumulation-mode devices. As a result of this quantum effect, the subthreshold swing of accumulation-mode trigate FETs is smaller than predicted by classical theory. This effect is not observed in fin-shaped FETs and gate-all-around MOSFETs and can be amplified by modifying the device cross section.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2008
Language Anglais
Journal information "Applied Physics Letters" - Vol. 92, no.13, p. 133511-1 - 3 (April 2008)
Peer reviewed yes
Publisher American Institute of Physics ((United States) [S.l.])
issn 0003-6951
e-issn 1077-3118
Publication status Publié
Affiliation UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords SOI ; Silicon-on-insulator ; Transistors
Links
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Bibliographic reference Colinge, Jean-Pierre ; Afzalian, Aryan ; Lee, Chi-Woo ; Yan, Ran ; Dehdashti-Akhavan, Nima. Influence of carrier confinement on the subthreshold swing of multigate silicon-on-insulator transistors. In: Applied Physics Letters, Vol. 92, no.13, p. 133511-1 - 3 (April 2008)
Permanent URL http://hdl.handle.net/2078.1/118868