Afzalian, Aryan
[UCL]
Lederer, Dimitri
[Tyndall National Institute, University of Cork]
Lee, Chi-Woo
[Tyndall National Institute, University of Cork]
Yan, Ran
[Tyndall National Institute, University of Cork]
Colinge, Jean-Pierre
[Tyndall National Institute, University of Cork]
The performances of accumulation-mode and inversion mode Multigate FETs in ultra scaled devices are compared through device simulations. We show that for sub 10nm cross dimensions, device performances (subthreshold slope, threshold voltage…) depend mainly on cross section size and bias voltage and very little on channel doping.
Bibliographic reference |
Afzalian, Aryan ; Lederer, Dimitri ; Lee, Chi-Woo ; Yan, Ran ; Colinge, Jean-Pierre. Ultra Scaled MultiGate SOI MOSFETs: Accumulation-Mode vs. Inversion-Mode.4th EuroSOI Workshop 2008 (Cork (Ireland), du 23/01/2008 au 25/01/2008). In: Proceedings of the 4th EuroSOI Workshop 2008, 2008, p. 47-48 |
Permanent URL |
http://hdl.handle.net/2078.1/120546 |