Harsh-environment Behaviours and Performances of Advanced Silicon-on-Insulator CMOS Transistors

Harsh environments for integrated circuits operation considered here are high temperature and radiation levels which can be encountered in several applications such as aerospace, nuclear science, ... The requirements of such systems for increased electronics functionalities call for the use of more and more CMOS technologies. We have investigated the characteristics and performance of SOI MOSFETs under such conditions, from 0.13 µm partially-depleted to sub-100nm FinFET and UTBB (ultra-thin-body and buried oxide) fully-depleted transistors. The results are discussed with regard to classical long-channel MOSFET theory and specificities or new observations on advanced devices are explained. Finally, conclusions for circuit performance are drawn.