Peruzzi, V.V.
[Centro Universitario da FEI]
Renaux, Christian
[UCL]
Flandre, Denis
[UCL]
Gimenez, S.P.
[Centro Universitario da FEI]
The focus of this work is to validate the drain current analytical model of the Fully Depleted Diamond SOI nMOSFETs, by applying the paired t-test statistical evaluation with experimental data of the six different samples of integrated circuits containing different Diamond SOI MOSFETs and Conventional ones counterparts. Two parameters are considered in this work: maximum transconductance and saturation drain current. We observe that, for the most cases (worst case is around 85% of the repeatability for the saturation drain current), the Diamond drain current analytical model is capable to reproduce a similar statistical behavior than the one observed for the conventional SOI nMOSFET counterpart, considering the same bias conditions and SOI CMOS manufacturing process of the integrated circuits.
Bibliographic reference |
Peruzzi, V.V. ; Renaux, Christian ; Flandre, Denis ; Gimenez, S.P.. Experimental Validation of the Drain Current Analytical Model of the Fully Depleted Diamond SOI nMOSFETs by Using Paired T-test Statistical Evaluation. In: ECS Transactions, Vol. 49, no.1, p. 169-176 (2012) |
Permanent URL |
http://hdl.handle.net/2078.1/129573 |