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Analysis of silicides formation for Schottky barrier contacts applications

Primary tabs

Katcki, J. [Institute of Electron Technology, Warsaw] Ratajczak, J. [Institute of Electron Technology, Warsaw] Laszcz, A. [Institute of Electron Technology, Warsaw] Czerwinski, A. [Institute of Electron Technology, Warsaw] Tang, Xiaohui [UCL] Dubois, Emmanuel [IEMN/ISEN, Villeneuve d'Ascq/France]

In this paper we present results of transmission electron microscopy observation of the formation processes of platinum, iridium, erbium and ytterbium silicides. The studies were focused on the measurement of silicide layers thickness and the interface roughness as well as the observation of the grain structure in silicide layers. The resuls of TEM analysis have been related to electrical parameters of silicides obtained in viarious annealing conditions.

Document type Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection
Publication date 2008
Language Anglais
Conference "7th Polish-Japanese Joint Seminar on Micro and Nano Analysis 2008", Warsaw (Poland) (du 07/09/2008 au 10/09/2008)
Peer reviewed yes
Host document
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords Transmission electron microscopy ; Platinum silicide ; Iridium silicide ; Erbium silicide ; Ytterbium silicide
Links
Bibliographic reference Katcki, J. ; Ratajczak, J. ; Laszcz, A. ; Czerwinski, A. ; Tang, Xiaohui ; et. al. Analysis of silicides formation for Schottky barrier contacts applications.7th Polish-Japanese Joint Seminar on Micro and Nano Analysis 2008 (Warsaw (Poland), du 07/09/2008 au 10/09/2008).
Permanent URL http://hdl.handle.net/2078.1/130434