User menu

Accès à distance ? S'identifier sur le proxy UCLouvain

Diffusion model for high-temperature off-state current in SOI MOSFETs

Primary tabs

Rudenko, Tamara [Lashkarov Institute of Semiconductor Physics, Kiev] Kilchytska, Valeriya [UCL] Rudenko, A.N. [Lashkarov Institute of Semiconductor Physics, Kiev]

In this paper off-state drain currents in long-channel inversion mode SOI MOSFETs are investigated in the range 50-320oC by measurements and simulations. The behavior of high-temperature (T>200oC) off-state currents is interpreted in terms of diffusion model, based on the analysis of carrier distribution in a SOI film in off-state of the device. The back-gate biasing and the silicon film thinning effects on high-temperature off-state currents are analyzed.

Document type Article de périodique (Journal article)
Access type Accès restreint
Publication date 1997
Language Anglais
Journal information "Microelectronic Engineering" - Vol. 36, no.1, p. 367-370 (01/06/1997)
Peer reviewed yes
Publisher Elsevier BV ((Netherlands) Amsterdam)
issn 0167-9317
e-issn 1873-5568
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords SOI ; MOSFET
Links
Bibliographic reference Rudenko, Tamara ; Kilchytska, Valeriya ; Rudenko, A.N.. Diffusion model for high-temperature off-state current in SOI MOSFETs. In: Microelectronic Engineering, Vol. 36, no.1, p. 367-370 (01/06/1997)
Permanent URL http://hdl.handle.net/2078.1/131451