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Fabrication of SOI nano devices

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Tang, Xiaohui [UCL] Reckinger, Nicolas [UCL] Bayot, Vincent [UCL]

Some current fabrication technologies of SOI nano devices are reviewed in this paper. By means of arsenic-assisted etching and oxidation effects, we have fabricated several SOI nano devices: single-electron transistor, nano floating gate memory device and cell, Ω-gate elevated source/drain MOSFET. The application of this technique for fabricating a Schottky barrier MOSFET is also presented.

Document type Contribution à ouvrage collectif (Book Chapter) – Chapitre
Access type Accès restreint
Publication date 2005
Language Anglais
Host document D.Flandre, A.N.Nazarov, P.L.F.Hemment ; "Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment"- p. 333-344
Publisher Kluwer Academic Publishers (Doordrecht (the netherlands))
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords SOI nano device ; single-electron transistor ; nano floating-gate memory ; elevated source/drain MOSFET ; silicidation
Links
Bibliographic reference Tang, Xiaohui ; Reckinger, Nicolas ; Bayot, Vincent. Fabrication of SOI nano devices. In: D.Flandre, A.N.Nazarov, P.L.F.Hemment, Science and Technology of Semiconductor-on-Insulator Structures and Devices Operating in a Harsh Environment, Kluwer Academic Publishers  : Doordrecht (the netherlands) 2005, p. 333-344
Permanent URL http://hdl.handle.net/2078.1/135192