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Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate

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Bui, Thanh Nhan [UCL] Raskin, Jean-Pierre [UCL] Hackens, Benoît [UCL]

Bi thin films, with a thickness of 100 nm, are deposited by electron-beam evaporation on a freshly cleaved (100) KCl substrate. The substrate temperature during film growth (Tdep) ranges from room temperature up to 170 C. Films deposited at room temperature exhibit a maze-like microstructure typical of the rhombohedral (110) texture, as confirmed by X-ray diffraction. For Tdep above 80 C, a different microstructure appears, characterized by concentric triangular shapes corresponding to the trigonal (111) texture. Temperature dependence of the resistivity shows a transition from a semiconductor-like behavior for films deposited at room temperature to a metallic-like behavior for Tdep above 80 C. From magnetoresistance measurements between room temperature and 1.6 K, we extract the electron and hole mobilities, concentrations, and mean free paths, which allow to draw a complete picture of the transport properties of both types of films. VC 2016 AIP Publishing LLC.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2016
Language Anglais
Journal information "Journal of Applied Physics" - Vol. 119, no.13, p. 135304 (2016)
Peer reviewed yes
Publisher American Institute of Physics
issn 0021-8979
e-issn 1089-7550
Publication status Publié
Affiliations UCL - SST/IMCN/NAPS - Nanoscopic Physics
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
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Bibliographic reference Bui, Thanh Nhan ; Raskin, Jean-Pierre ; Hackens, Benoît. Semiconductor- to metallic-like behavior in Bi thin films on KCl substrate. In: Journal of Applied Physics, Vol. 119, no.13, p. 135304 (2016)
Permanent URL http://hdl.handle.net/2078.1/173178