Atypical Exciton-Phonon Interactions in WS2 and WSe2 Monolayers Revealed by Resonance Raman Spectroscopy

del Corro, Elena [Universidade Federal de Minas Geraisa] Botello Mendez, Andrés Rafael [UCL] Gillet, Yannick [UCL] Elias, Ana Laura [Pennsylvania State University] Terrones, Humberto [Rensselaer Polytechnic Institute] Feng, Simin [Pennsylvania State University] Fantini, Cristiano [Universidade Federal de Minas Geraisa] Rhodes, Daniel [Florida State University] Pradhan, Narayan [Florida State University] Balicas, Luis [Florida State University] Gonze, Xavier [UCL] Charlier, Jean-Christophe [UCL] Terrones, Mauricio [Pennsylvania State University] Pimenta, Marcos A. [Universidade Federal de Minas Geraisa] et al.[show all]

Resonant Raman spectroscopy is a powerful tool for providing information about excitons and exciton–phonon coupling in two-dimensional materials. We present here resonant Raman experiments of single-layered WS2 and WSe2 using more than 25 laser lines. The Raman excitation profiles of both materials show unexpected differences. All Raman features of WS2 monolayers are enhanced by the first-optical excitations (with an asymmetric response for the spin–orbit related XA and XB excitons), whereas Raman bands of WSe2 are not enhanced at XA/B energies. Such an intriguing phenomenon is addressed by DFT calculations and by solving the Bethe-Salpeter equation. These two materials are very similar. They prefer the same crystal arrangement, and their electronic structure is akin, with comparable spin–orbit coupling. However, we reveal that WS2 and WSe2 exhibit quite different exciton–phonon interactions. In this sense, we demonstrate that the interaction between XC and XA excitons with phonons explains the different Raman responses of WS2 and WSe2, and the absence of Raman enhancement for the WSe2 modes at XA/B energies. These results reveal unusual exciton–phonon interactions and open new avenues for understanding the two-dimensional materials physics, where weak interactions play a key role coupling different degrees of freedom (spin, optic, and electronic).