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Effective resistivity of fully-processed SOI substrates

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Lederer, Dimitri [UCL] Raskin, Jean-Pierre [UCL]

We introduce in this work a new quality factor called effective resistivity (rho(eff)), which is used to characterize and fairly compare the substrate resistivity of fully processed SOI wafers. The impacts on rho(eff) (and thus on microwave losses) of the bias (V-a), fixed oxide charges (Q(ox)) traps at the SiO2/Si interface (D-it), oxide thickness (t(ox)) and line geometry are quantified and discussed for the first time. Different design and technological conclusions are drawn. (C) 2004 Elsevier Ltd. All rights reserved.

Document type Article de périodique (Journal article) – Article de recherche
Access type Accès restreint
Publication date 2005
Language Anglais
Journal information "Solid-State Electronics" - Vol. 49, no. 3, p. 491-496 (2005)
Peer reviewed yes
Publisher Pergamon-elsevier Science Ltd (Oxford)
issn 0038-1101
e-issn 1879-2405
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords effective resistivity ; interface traps ; oxide charges ; coplanar waveguide ; microwave losses ; high resistivity substrate ; SOI
Links
Bibliographic reference Lederer, Dimitri ; Raskin, Jean-Pierre. Effective resistivity of fully-processed SOI substrates. In: Solid-State Electronics, Vol. 49, no. 3, p. 491-496 (2005)
Permanent URL http://hdl.handle.net/2078.1/39560