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Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors

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Deceuster, D. [UCL] Flandre, Denis [UCL] Colinge, Jean-Pierre [UCL] Cristoloveanu, Sorin [IMEP, Grenoble]

The serial-parallel association of SOI MOSFETs proves to be useful for increasing the breakdown voltage and the early voltage of transistor structures. This permits one to realise current mirrors with an output-to-input current ratio close to unity in the weak, moderate and strong inversion regimes of the MOSFETs.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 1996
Language Anglais
Journal information "Electronics Letters" - Vol. 32, no. 4, p. 278-279 (1996)
Peer reviewed yes
Publisher Iee-inst Elec Eng (Hertford)
issn 0013-5194
e-issn 1350-911X
Publication status Publié
Affiliation UCL - FSA/ELEC - Département d'électricité
Keywords silicon-on-insulator ; MOSFET ; analogue circuits
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Bibliographic reference Deceuster, D. ; Flandre, Denis ; Colinge, Jean-Pierre ; Cristoloveanu, Sorin. Improvement of SOI MOS current-mirror performances using serial-parallel association of transistors. In: Electronics Letters, Vol. 32, no. 4, p. 278-279 (1996)
Permanent URL http://hdl.handle.net/2078.1/47167