Flandre, Denis
[UCL]
The theoretical foundation of unique floating substrate effects, which have been observed experimentally, on the intrinsic gate capacitance characteristics in saturation of SOI n-MOSFETs, is clearly established using original two-dimensional numerical device simulations.
| Bibliographic reference |
Flandre, Denis. Measurement and Simulation of Floating Substrate Effects On the Intrinsic Gate Capacitance Characteristics of Soi N-mosfets. In: Electronics Letters, Vol. 28, no. 10, p. 967-969 (1992) |
| Permanent URL |
http://hdl.handle.net/2078.1/50421 |
