Labbe, Gérard
[UCL]
The characteristics of materials are affected by irradiation and this has been studied by the author in connection with its influence on the performance of several types of electronic devices, including transistors, diodes, thyristors and triacs. Special mention is made of the neutronic (n, gamma ) reaction on silicon-30. Technical parameters studied and plotted include current densities as a function of voltage, frequency, temperature, etc. A short note is given of developments in light amplified transistors.
| Bibliographic reference |
Labbe, Gérard. [Electronic power sources: some actual cases [semiconductor devices]]. In: Acta Technica Belgica. Revue H F: Electricite Courants Faibles. Electronique Telecommunications, Vol. 10, no. 4, p. 90-97 (1976) |
| Permanent URL |
http://hdl.handle.net/2078.1/66650 |
