Accès à distance ? S'identifier sur le proxy UCLouvain
Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications
Primary tabs
Document type | Article de périodique (Journal article) – Article de recherche |
---|---|
Access type | Accès restreint |
Publication date | 2010 |
Language | Anglais |
Journal information | "Solid-State Electronics" - Vol. 54, no. 2, p. 104-114 (2010) |
Peer reviewed | yes |
issn | 0038-1101 |
e-issn | 1879-2405 |
Publication status | Publié |
Affiliations |
UCL
- UCL - EPL/EPL - Ecole Polytechnique de Louvain |
Keywords | 1T-DRAM ; SOI MOSFETs ; Transient ; Body potential ; Model ; 1T-DRAM ; Band-to-band (B2B) tunneling ; Dynamic gate coupling |
Links |
Bibliographic reference | Bawedin, Maryline ; Cristoloveanu, Sorin ; Flandre, Denis ; et. al. Dynamic body potential variation in FD SOI MOSFETs operated in deep non-equilibrium regime: Model and applications. In: Solid-State Electronics, Vol. 54, no. 2, p. 104-114 (2010) |
---|---|
Permanent URL | http://hdl.handle.net/2078.1/87990 |