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Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting

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Lugo-Munoz, Denise [Simón Bolívar University, Caracas, Venezuela] de Souza, Michelly [Centro Universitário da FEI, São Bernardo do Campo, SP, Brazil] Pavanello, Marcello [Centro Universitário da FEI, São Bernardo do Campo, SP, Brazil] Flandre, Denis [UCL] Muci, Juan [Simón Bolívar University, Caracas, Venezuela] Garcia Sanchez, F.J. [Simón Bolívar University, Caracas, Venezuela]

A global lateral fitting procedure is proposed to extract the parameters of quadratic double exponential junction models in the presence of parasitic series resistance. Error analysis of the extracted parameters values within a large representative family of synthetic data indicate excellent match between the extracted values and a wide range of the original given model parameters. The procedure was also tested on real data to extract the model parameters of an experimental Silicon PIN diode measured at cryogenic temperature.

Document type Article de périodique (Journal article) – Article de recherche
Publication date 2010
Language Anglais
Journal information "ECS Transactions" - Vol. 31, no. 1, p. 369-376 (2010)
Peer reviewed yes
issn 1938-5862
Publication status Publié
Affiliations Simón Bolívar University, Caracas, Venezuela
Centro Universitário da FEI, São Bernardo do Campo, SP, Brazil
UCL - SST/ICTM/ELEN - Pôle en ingénierie électrique
Keywords Parameter extraction
Links
Bibliographic reference Lugo-Munoz, Denise ; de Souza, Michelly ; Pavanello, Marcello ; Flandre, Denis ; Muci, Juan ; et. al. Parameter Extraction in Quadratic Exponential Junction Model with Series Resistance using Global Lateral Fitting. In: ECS Transactions, Vol. 31, no. 1, p. 369-376 (2010)
Permanent URL http://hdl.handle.net/2078.1/88006