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Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures
Primary tabs
| Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection |
|---|---|
| Publication date | 2000 |
| Language | Anglais |
| Conference | "International Conference on Microelectronics and Packaging", Manaus (Brésil) (du 18/09/2000 au 24/09/2000) |
| Peer reviewed | yes |
| Host document | "Proceedings of the International Conference on Microelectronics and Packaging"- 304-307 |
| Affiliations |
UCL
- FSA/ELEC - Département d'électricité Universidade de São Paulo - Laboratório de Sistemas Integráveis |
| Keywords | SOI ; SOI MOSFET |
| Links |
| Bibliographic reference | Bellodi, Marcello ; Iniguez, Benjamin ; Flandre, Denis ; Raynaud, C. ; Martino, Joao Antonio. Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures.International Conference on Microelectronics and Packaging (Manaus (Brésil), du 18/09/2000 au 24/09/2000). In: Proceedings of the International Conference on Microelectronics and Packaging, 2000, p.304-307 |
|---|---|
| Permanent URL | http://hdl.handle.net/2078.1/95119 |