Characterisation of electric properties in thin bismuth films

Thin bismuth films with thicknesses ranging from 10 to 140 nm were produced and characterized in situ. The substrate is Si (100) with a 90 nm SiO2 oxide layer. Several parameters affecting bismuth conductivity were studied: thickness, deposition temperature, oxidation and sample temperature. Our own data were compared to literature data to open new paths. Oxidation of film was recorded, and fitting was performed on data. Impact of deposition temperatures on film microstructure and conductivity was studied. Film relaxation with upper bound fit was made to compute the impact of relaxation on conductivity as function of time. Oscillations of conductivity as function of thickness were observed and compared with literature records. Doubts were raised on conductivity oscillations in samples deposited at 380K. Valley of conductivity were observed on several samples and a hypothesis was proposed to explain why it was not observed on all samples. Finally, recommendations for the pursuit of the project are made.