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Combined in-situ stress and thickness monitoring during electrochemical oxidation of silicon
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Document type | Communication à un colloque (Conference Paper) – Présentation orale avec comité de sélection, Abstract |
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Publication date | 2012 |
Language | Anglais |
Conference | "8th International Conference on Porous Semiconductors-Science and Technology", Malaga (du 25/03/2012 au 30/03/2012) |
Host document | "Proceedings of the 8th International Conference on Porous Semiconductors-Science and Technology"- p. Abstract O2-03 |
Affiliation | UCL - SST/IMMC/IMAP - Materials and process engineering |
Links |
Bibliographic reference | Blaffart, Frédéric ; Santoro, Ronny ; Proost, Joris. Combined in-situ stress and thickness monitoring during electrochemical oxidation of silicon.8th International Conference on Porous Semiconductors-Science and Technology (Malaga, du 25/03/2012 au 30/03/2012). In: Proceedings of the 8th International Conference on Porous Semiconductors-Science and Technology, 2012, p. Abstract O2-03 |
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Permanent URL | http://hdl.handle.net/2078/118535 |