Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of 
nanowires

Lymperakis, Liverios; Weidlich, P. H.; Eisele, Holger; Schnedler, M.; Nys, Jean Philippe; Grandidier, Bruno; Stiévenard, Didier; Dunin-Borkowski, Rafal E.; Neugebauer, Jörg; Ebert, Philipp

doi:10.1063/1.4823723

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Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires

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Lymperakis, Liverios
Microstructure, Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Neugebauer, Jörg
Computational Materials Design, Max-Planck-Institut für Eisenforschung GmbH, Max Planck Society;

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Citation

Lymperakis, L., Weidlich, P. H., Eisele, H., Schnedler, M., Nys, J. P., Grandidier, B., et al. (2013). Hidden surface states at non-polar GaN (101̄0) facets: Intrinsic pinning of nanowires. Applied Physics Letters, 103(15): 152101. doi:10.1063/1.4823723.

Cite as: https://hdl.handle.net/21.11116/0000-0001-D537-1

Abstract

We investigate the electronic structure of the GaN (10 1 ̄ 0) prototype surface for GaN nanowire sidewalls. We find a paradoxical situation that a surface state at all k points in the bandgap cannot be probed by conventional scanning tunneling microscopy, due to a dispersion characterized by a steep minimum with low density of states (DOS) and an extremely flat maximum with high DOS. Based on an analysis of the decay behavior into the vacuum, we identify experimentally the surface state minimum 0.6 ± 0.2 eV below the bulk conduction band in the gap. Hence, GaN nanowires with clean (10 1 ̄ 0) sidewall facets are intrinsically pinned. © 2013 AIP Publishing LLC.