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Datta-Das-type spin-field-effect transistor in the nonballistic regime
| Title: | Datta-Das-type spin-field-effect transistor in the nonballistic regime |
| Authors: | Ohno, Munekazu Browse this author →KAKEN DB | | Yoh, Kanji Browse this author |
| Issue Date: | 22-Jan-2008 |
| Publisher: | American Physical Society |
| Journal Title: | Physical Review. B |
| Volume: | 77 |
| Issue: | 4 |
| Start Page: | 045323 |
| Publisher DOI: | 10.1103/PhysRevB.77.045323 |
| Abstract: | We analyzed the applicability of original Datta-Das proposal for spin-field-effect transistor (spin-FET) to nonballistic regime based on semiempirical Monte Carlo simulation for spin transport. It is demonstrated that the spin helix state in two-dimensional electron gas system is sufficiently robust against D'yakonov-Perel' spin relaxation to allow an operation of Datta-Das-type spin-FET in the nonballistic transport regime. It is also shown that the spin diffusion length of the spin helix state can be increased with an in-plane electrical field along the [110] direction. In marked contrast to early proposals for nonballistic spin-FETs, the “on” and “off” states are characterized by a 180° phase difference in the spin precession motions, which is highly advantageous in terms of device flexibility. |
| Rights: | (c) 2008 American Physical Society |
| Relation: | http://www.aps.org/ |
| Type: | article |
| URI: | http://hdl.handle.net/2115/32885 |
| Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 陽 完治
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