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Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution
Title: | Improvements of electronic and optical characteristics of n-GaN-based structures by photoelectrochemical oxidation in glycol solution |
Authors: | Shiozaki, Nanako Browse this author | Hashizume, Tamotsu Browse this author →KAKEN DB |
Issue Date: | 15-Mar-2009 |
Publisher: | American Institute of Physics |
Journal Title: | Journal of Applied Physics |
Volume: | 105 |
Issue: | 6 |
Start Page: | 064912 |
Publisher DOI: | 10.1063/1.3079502 |
Abstract: | Surface control of n-GaN was performed by applying a photoelectrochemical oxidation method in a glycol solution to improve the optical and electronic characteristics. The fundamental properties of the oxidation were investigated. The oxidation, chemical composition, and bonding states were analyzed by x-ray photoelectron spectroscopy and micro-Auger electron spectroscopy, in which confirmed the formation of gallium oxide on the surface. The oxide formation rate was about 8 nm/min under UV illumination of 4 mW/cm2. After establishing the basic properties for control of n-GaN oxidation, the surface control technique was applied to achieve low-damage etching, enhancement of the photoluminescence intensity, and selective passivation of the air-exposed sidewalls in an AlGaN/GaN high electron mobility transistor wire structure. The capacitance-voltage measurement revealed the minimum interface- state density between GaN and anodic oxide to be about 5×10^11 cm^[−2] eV^[−1], which is rather low value for compound semiconductors. |
Rights: | Copyright 2009 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. |
Type: | article |
URI: | http://hdl.handle.net/2115/38102 |
Appears in Collections: | 量子集積エレクトロニクス研究センター (Research Center for Integrated Quantum Electronics) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 橋詰 保
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