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Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors
| Title: | Effect of Size Reduction on Switching Characteristics in GaAs-Based Schottky-Wrap-Gate Quantum Wire Transistors |
| Authors: | Shiratori, Yuta Browse this author | | Kasai, Seiya Browse this author →KAKEN DB |
| Keywords: | quantum wire transistor | | GaAs | | Schottky wrap gate | | power consumption | | switching voltage | | operation temperature |
| Issue Date: | 25-Apr-2008 |
| Publisher: | Japan Society of Applied Physics |
| Journal Title: | Japanese Journal of Applied Physics |
| Volume: | 47 |
| Issue: | 4 |
| Start Page: | 3086 |
| End Page: | 3090 |
| Publisher DOI: | 10.1143/JJAP.47.3086 |
| Abstract: | The effect of size reduction on switching characteristics is investigated experimentally for the low-switching-power operation of GaAs-based quantum wire transistors (QWRTr's) utilizing etched AlGaAs/GaAs nanowires controlled by Schottky wrap gates (WPGs). WPG QWRTr's in which the wire width, W, and gate length, L_G, were systematically changed are fabricated and characterized with respect to operation temperature, switching voltage, ΔV_G, gate voltage to Fermi energy scaling factor, α, and power-delay product, PDP. When W is less than 200 nm, more than 80% of the fabricated devices exhibit quantized conductance at 30 K. The device with W=40 nm shows a large α of 0.7. Decreasing LG into the sub-100-nm range was found to be effective for improving power consumption, since the short channel effect was suppressed by tight potential control in the WPG structure. |
| Rights: | © 2008 The Japan Society of Applied Physics |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/38671 |
| Appears in Collections: | 情報科学院・情報科学研究院 (Graduate School of Information Science and Technology / Faculty of Information Science and Technology) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 葛西 誠也
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