HUSCAP logo Hokkaido Univ. logo
Hokkaido University | Library | HUSCAP
Advanced Search
Home
About HUSCAP
Open Access Policy
 
Browse by Author
 
Browse
Communities
& Collections
 
Scholarly Journals
Theses
Doctoral Dissertations
Listed by Graduate Schools
Conference Procs.
Events
 
HUSCAP Senior
(in Japanese)
 
Societies
 
Downloads (country)
 
For university staff
How to post your
papers to HUSCAP
Publication of theses
Helpline about
theses publication
 
Open Archives Compliant
 
You can search
our collection
also at:
Google
Google Scholar
CiNii
IRDB
OAIster
NDLTD
 

Hokkaido University Collection of Scholarly and Academic Papers >
Graduate School of Engineering / Faculty of Engineering >
北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University >
No.156 >

フォトルミネセンス法によるInGaAs表面の評価

Files in This Item:
156_59-66.pdf474.52 kBPDFView/Open
Please use this identifier to cite or link to this item:http://hdl.handle.net/2115/42291

Title: フォトルミネセンス法によるInGaAs表面の評価
Other Titles: Characterization of InGaAs Surface by Photoluminescence
Authors: 岩舘, 弘剛1 Browse this author
斉藤, 俊也2 Browse this author
長谷川, 英機3 Browse this author
Authors(alt): Iwadate, H.1
Saitoh, T.2
Hasegawa, H.3
Issue Date: 20-Jul-1991
Publisher: 北海道大学
Journal Title: 北海道大學工學部研究報告
Journal Title(alt): Bulletin of the Faculty of Engineering, Hokkaido University
Volume: 156
Start Page: 59
End Page: 66
Type: bulletin (article)
URI: http://hdl.handle.net/2115/42291
Appears in Collections:北海道大学工学部研究報告 = Bulletin of the Faculty of Engineering, Hokkaido University > No.156

Export metadata:

OAI-PMH ( junii2 , jpcoar_1.0 )

MathJax is now OFF:


 
 - Hokkaido University