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Highly increased capacitance and thermal stability of anodic oxide films on oxygen-incorporated Zr-Ti alloy
| Title: | Highly increased capacitance and thermal stability of anodic oxide films on oxygen-incorporated Zr-Ti alloy |
| Authors: | Habazaki, H. Browse this author →KAKEN DB | | Kobayashi, K. Browse this author | | Tsuji, E. Browse this author | | Zhu, C. Browse this author | | Aoki, Y. Browse this author | | Nagata, S. Browse this author |
| Keywords: | Anodic oxide | | Zr-Ti alloy | | Dielectric material | | Anodizing |
| Issue Date: | Oct-2017 |
| Publisher: | Springer |
| Journal Title: | Journal of Solid State Electrochemistry |
| Volume: | 21 |
| Issue: | 10 |
| Start Page: | 2807 |
| End Page: | 2816 |
| Publisher DOI: | 10.1007/s10008-017-3607-2 |
| Abstract: | Heat treatment of Zr-24 at% Ti alloy with barrier-type dielectric anodic oxide films was conducted at 473 K in air to examine the thermal stability of the dielectric oxide films for possible electrolytic capacitor application. The anodic oxide film was formed by anodizing of the alloy at 50 V for 30 min in 0.1 mol dm(-3) ammonium pentaborate electrolyte. The anodic oxide film of 125 nm thickness was crystalline, containing both monoclinic and tetragonal ZrO2 phase. It was found that marked thickening of the oxide film with generation of cracks occurred during heat treatment at 473 K. Thus, the dielectric loss was largely increased along with the capacitance increase. In contrast, the anodic oxide film formed on the oxygen-incorporated alloy remained uniform, and no significant increase in dielectric loss was observed even after the heat treatment. The capacitance of the anodic film became as high as 4.8 mF m(-2), which was nearly twice that on Ta. The high capacitance was associated with the preferential formation of tetragonal ZrO2 phase in the anodic oxide film on the oxygen-incorporated alloy. Findings indicated that the oxygen-incorporated Zr-Ti alloy is a promising novel material for capacitor application. |
| Rights: | "The final publication is available at link.springer.com". |
| Type: | article (author version) |
| URI: | http://hdl.handle.net/2115/71554 |
| Appears in Collections: | 工学院・工学研究院 (Graduate School of Engineering / Faculty of Engineering) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 幅崎 浩樹
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