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High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding similar to 3000 S cm(-1)
| Title: | High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding similar to 3000 S cm(-1) |
| Authors: | Wei, Mian Browse this author | | Sanchela, Anup V. Browse this author | | Feng, Bin Browse this author | | Ikuhara, Yuichi Browse this author | | Cho, Hai Jun Browse this author | | Ohta, Hiromichi Browse this author →KAKEN DB |
| Issue Date: | 13-Jan-2020 |
| Publisher: | American Institute of Physics (AIP) |
| Journal Title: | Applied physics letters |
| Volume: | 116 |
| Issue: | 2 |
| Start Page: | 022103 |
| Publisher DOI: | 10.1063/1.5128410 |
| Abstract: | La-doped SrSnO3 (LSSO) is known as one of the deep-ultraviolet (DUV)-transparent conducting oxides with an energy bandgap of similar to 4.6 eV. Since LSSO can be grown heteroepitaxially on more wide bandgap substrates such as MgO (E-g similar to 7.8 eV), LSSO is considered to be a good candidate for a DUV-transparent electrode. However, the electrical conductivity of LSSO films is below 1000 S cm(-1), most likely due to the low solubility of the La ion in the LSSO lattice. Here, we report that high electrically conducting (>3000 S cm(-1)) LSSO thin films with an energy bandgap of similar to 4.6 eV can be fabricated by pulsed laser deposition on a MgO substrate followed by a simple annealing in vacuum. From the X-ray diffraction and the scanning transmission electron microscopy analyses, we found that lateral grain growth occurred during the annealing, which improved the activation rate of the La ion, leading to a significant improvement of the carrier concentration (3.26 x 10(20) cm(-3)) and Hall mobility (55.8 cm(2) V-1 s(-1)). The present DUV-transparent oxide semiconductor would be useful as a transparent electrode for developing optoelectronic devices, which transmit and/or emit DUV-light. |
| Rights: | This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Wei Mian, Sanchela Anup V., Feng Bin, Ikuhara Yuichi, Cho Hai Jun, Ohta Hiromichi. High electrical conducting deep-ultraviolet-transparent oxide semiconductor La-doped SrSnO3 exceeding similar to 3000 S cm(-1). Applied physics letters 116(2) 022103 (2020) and may be found at https://doi.org/10.1063/1.5128410 . |
| Type: | article |
| URI: | http://hdl.handle.net/2115/80141 |
| Appears in Collections: | 電子科学研究所 (Research Institute for Electronic Science) > 雑誌発表論文等 (Peer-reviewed Journal Articles, etc)
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Submitter: 太田 裕道
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