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Journal Article | PreJuSER-786 |
; ; ; ;
2008
APS
College Park, Md.
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Please use a persistent id in citations: http://hdl.handle.net/2128/11083 doi:10.1103/PhysRevB.77.035311
Abstract: Magnetotransport phenomena in the high-density two-dimensional electron gas of AlGaN/GaN heterostrutures are investigated. Peculiarities of low- and high-field magnetotransport measurements in the temperature range from 0.3 to 10 K are discussed. The weak localization and antilocalization effects are observed and analyzed. The Rashba constant describing the spin-orbit interaction is extracted from the results of low-field magnetotransport for the structure with 33% aluminum content in the barrier and an electron sheet density of 1.1 x 10(13) cm(-2) and appears to be of 1.01 x 10(-10) eV cm.
Keyword(s): J
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