Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

Xu, T.; Capiod, P.; Lefebvre, I.; Wei, M. J.; Nys, J. P.; Plissard, S. R.; Caroff, P.; Ebert, Ph.; Díaz Álvarez, A.; Troadec, D.; Grandidier, B.; Berthe, M.; Patriarche, G.; Han, X. L.

doi:10.1063/1.4930991

Journal Article

FZJ-2015-06018

Type I band alignment in GaAs81Sb19/GaAs core-shell nanowires

Xu, T. ; Wei, M. J. ; Capiod, P. ; Díaz Álvarez, A. ; Han, X. L. ; Troadec, D. ; Nys, J. P. ; Berthe, M. ; Lefebvre, I. ; Patriarche, G. ; Plissard, S. R. ; Caroff, P. ; Ebert, P.FZJ* ; Grandidier, B. (Corresponding author)

2015
American Inst. of Physics Melville, NY

Applied physics letters 107(11), 112102 - (2015) [10.1063/1.4930991]

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Please use a persistent id in citations: http://hdl.handle.net/2128/17310 doi:10.1063/1.4930991

Abstract: The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs81 Sb 19/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs 81 Sb 19 intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs 81 Sb 19 core and the GaAs shell and identifies it as a type I band alignment.

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