Journal Article

FZJ-2015-05073

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Negative differential resistance in direct bandgap GeSn p-i-n structures

Schulte-Braucks, C. (Corresponding author)FZJ* ; Stange, D.FZJ* ; von den Driesch, N.FZJ* ; Blaeser, S.FZJ* ; Ikonic, Z. ; Hartmann, J. M. ; Mantl, S.FZJ* ; Buca, D.FZJ*

2015
American Inst. of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/17321  doi:10.1063/1.4927622

Abstract: Certain GeSn alloys are group IV direct bandgap semiconductors with prospects for electrical and optoelectronical applications. In this letter, we report on the temperature dependence of the electrical characteristics of high Sn-content Ge0.89Sn0.11 p-i-n diodes. NiGeSn contacts were used to minimize the access resistance and ensure compatibility with silicon technology. The major emphasis is placed on the negative differential resistance in which peak to valley current ratios up to 2.3 were obtained. TCAD simulations were performed to identify the origin of the various current contributions, providing evidence for direct band to band tunneling and trap assisted tunneling.

Keyword(s): Key Technologies (1st) ; Condensed Matter Physics (2nd)

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Contributing Institute(s):

1. Halbleiter-Nanoelektronik (PGI-9)
2. JARA-FIT (JARA-FIT)

Research Program(s):

1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)
2. E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) (619509)

Appears in the scientific report 2015

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Database coverage:
; ; Current Contents - Physical, Chemical and Earth Sciences ; IF < 5 ; JCR ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection

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