Journal Article FZJ-2013-03319

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png
Scanning tunneling microscopy with InAs nanowire tips

 ;  ;  ;  ;  ;  ;  ;

2012
American Institute of Physics Melville, NY

Applied physics letters 101(24), 243101 - () [10.1063/1.4769450]

This record in other databases:  

Please use a persistent id in citations:   doi:

Abstract: Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.

Classification:

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 421 - Frontiers of charge based Electronics (POF2-421) (POF2-421)

Appears in the scientific report 2013
Database coverage:
Medline ; OpenAccess ; Allianz-Lizenz / DFG ; Current Contents - Social and Behavioral Sciences ; JCR ; NationallizenzNationallizenz ; SCOPUS ; Science Citation Index ; Science Citation Index Expanded ; Thomson Reuters Master Journal List ; Web of Science Core Collection
Click to display QR Code for this record

The record appears in these collections:
Document types > Articles > Journal Article
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
Open Access

 Record created 2013-07-24, last modified 2021-01-29


Rate this document:

Rate this document:
1
2
3
 
(Not yet reviewed)