Home > Publications database > Scanning tunneling microscopy with InAs nanowire tips |
Journal Article | FZJ-2013-03319 |
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2012
American Institute of Physics
Melville, NY
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Please use a persistent id in citations: http://hdl.handle.net/2128/17350 doi:10.1063/1.4769450
Abstract: Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographically, which is fully compatible with further integrated circuitry on the GaAs wafer. STM images show a z noise of 2 pm and a lateral stability of, at least, 0.5 nm on a Au(111) surface. I(z) spectroscopy reveals an exponential decay indicating tunneling through vacuum. Subsequent electron microscopy images of the tip demonstrate that the wires are barely modified during the STM imaging.
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