Journal Article

PreJuSER-53191

http://join2-wiki.gsi.de/foswiki/pub/Main/Artwork/join2_logo100x88.png Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

Rauwel, E. ; Dubourdieu, C. ; Holländer, B.FZJ* ; Rochat, N. ; Ducroquet, F. ; Rossell, M. D. ; Van Tendeloo, G. ; Pelissier, B.

2006
American Institute of Physics Melville, NY

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Please use a persistent id in citations: http://hdl.handle.net/2128/2040  doi:10.1063/1.2216102

Abstract: Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO2 is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH3. (c) 2006 American Institute of Physics.

Keyword(s): J

Note: Record converted from VDB: 12.11.2012

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Contributing Institute(s):

1. Institut für Halbleiterschichten und Bauelemente (ISG-1)
2. Center of Nanoelectronic Systems for Information Technology (CNI)

Research Program(s):

1. Grundlagen für zukünftige Informationstechnologien (P42)

Appears in the scientific report 2006
Notes: This version is available at the following Publisher URL: http://apl.aip.org

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