Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

Vitusevich, S.; Belyaev, A. E.; Eastman, L. F.; Smart, J.; Klein, N.; Vertiatchikh, A.; Sokolov, V. N.; Petrychuk, C. C.; Tilak, V.; Kochelap, V. A.; Danylyuk, S. V.

doi:10.1063/1.1463202

Journal Article

Excess low-frequency noise in AlGaN/GaN-based high-electron-mobility transistors

Vitusevich, S.FZJ* ; Danylyuk, S. V.FZJ* ; Klein, N.FZJ* ; Petrychuk, C. C. ; Sokolov, V. N. ; Kochelap, V. A. ; Belyaev, A. E. ; Tilak, V. ; Smart, J. ; Vertiatchikh, A. ; Eastman, L. F.

2002
American Institute of Physics Melville, NY

Applied physics letters 80, 2126 (2002) [10.1063/1.1463202]

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Please use a persistent id in citations: http://hdl.handle.net/2128/2068 doi:10.1063/1.1463202

Abstract: The low-frequency 1/f noise characteristics of AlGaN/GaN high-electron-mobility transistors with gate length scaled down to 150 nm grown on sapphire by metalorganic chemical vapor deposition have been studied. Certain features of the 1/f noise have been revealed in these short-gate transistors. The low-frequency noise spectra show drastically different behavior depending on the gate voltage V-G in the range of low (V(Gt)less than or equal toV(G)less than or equal to0) and high (V-G<V-Gt) biases. The noise spectra-gate bias dependences allow one to distinguish a spatial redistribution of effective noise sources in the transistor channel. The Hooge parameter has been deduced separately for the ungated region, alpha(H)(p)similar or equal to10(-3), and for the gated region, alpha(H)(a)similar or equal to2x10(-4), of the transistor channel. These values are as low as those previously observed in nitride heterostructures grown on silicon carbide substrates. (C) 2002 American Institute of Physics.

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